| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,000 pcs
|
23000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The AP4024GEMT-HF is an N-Channel MOSFET manufactured by Advanced Power Electronics Corp. This component is designed for DC-DC converter applications and utilizes a PMPAK® 5x6 package, which is footprint compatible with SO-8 and offers a lower profile with backside heat sinking capabilities.
Key electrical specifications include a minimum breakdown voltage of 30V. The Drain-Source On-State Resistance (Rds(on)) is typically 3mΩ at 10V and 5mΩ at 4.5V gate-source voltage. The typical Gate-Source Threshold Voltage (VTH) is 1.79V, with a maximum Gate-Source Voltage rating of ±20V.
The component is specified with a minimum Drain-Source Resistance of 8.5mΩ. It is packaged in a DFN8(5X6) surface-mount configuration. The PMPAK® 5x6 package is noted for its suitability in DC-DC converter applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the AP4024GEMT-HF is 30V.
The typical Rds(on) at 10V VGS for the AP4024GEMT-HF is 3mΩ.
The typical Gate-Source Threshold Voltage (VTH) for the AP4024GEMT-HF is 1.79V.
The AP4024GEMT-HF is in a DFN8(5X6) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.