| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,270 pcs
|
13270 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The AOTF409 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor (AOS). It utilizes advanced trench technology to achieve excellent RDS(ON) and low gate resistance, making it suitable for high current load applications.
Key electrical characteristics include a drain-source breakdown voltage of -60V and a maximum continuous drain current of -24A at 25°C. The static drain-source on-resistance is rated at 40mΩ maximum at VGS = 10V and 54mΩ maximum at VGS = 4.5V. The device operates within a junction and storage temperature range of -55 to 175°C.
Packaged in a TO220FL, the AOTF409 offers good thermal resistance. Its advanced trench technology and robust package make it a reliable choice for various power management tasks in industrial and consumer electronics.
This MOSFET is RoHS3 compliant and Halogen Free. It is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is -60V.
The maximum continuous drain current (ID) is -24A at 25°C.
The typical gate threshold voltage (VGS(th)) is -2.1V.
The maximum static drain-source on-resistance (RDS(ON)) at VGS=10V is 40mΩ.
The AOTF409 is supplied in a TO220FL package.
The junction and storage temperature range is -55 to 175°C.
The AOTF409 is RoHS3 Compliant.