| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present | |
| Tape & Reel |
The Infineon BSS606N is an N-channel, enhancement-mode MOSFET from the OptiMOS™-3 family. It is logic-level rated for 4.5V gate drive and is avalanche rated, making it suitable for demanding applications.
Key electrical characteristics include a 60V drain-source breakdown voltage and a continuous drain current of 3.2A at 25°C ambient temperature. The on-state resistance is as low as 47 mOhm typical at VGS=10V and ID=3.2A. Dynamic characteristics include input capacitance of 657pF maximum and output capacitance of 174pF maximum.
This MOSFET is qualified according to AEC Q101 standards, indicating its suitability for automotive and high-reliability applications. It is supplied in a PG-SOT-89 package, designed for surface mounting. The device is 100% lead-free, halogen-free, and RoHS compliant.
With its robust features and reliable performance, the BSS606N is a strong choice for various switching and amplification tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60 V.
The typical gate threshold voltage is 1.8 V.
The maximum continuous drain current at 25°C is 3.2 A.
The typical on-state resistance is 47 mOhm.
The BSS606N is available in the PG-SOT-89 package.
Yes, the BSS606N is qualified according to AEC Q101.
Yes, the BSS606N is logic level rated for 4.5V.