| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,350 pcs
|
2350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Mounting Type |
The AOS AOT13N50 is an N-Channel MOSFET designed for high-performance and robustness in AC-DC applications. It offers a high drain-source voltage of 500V and a continuous drain current of 13A at 25°C.
Key electrical characteristics include a maximum static drain-source on-resistance of 510mΩ at Vgs=10V, a gate threshold voltage ranging from 3.3V to 4.5V, and a total gate charge of 30.7nC typical. The device also features guaranteed avalanche capability.
Packaged in a standard TO-220 through-hole configuration, the AOT13N50 is suitable for various industrial power supply and motor drive applications. Its advanced high voltage MOSFET process ensures reliability and performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The continuous drain current is 13A at 25°C.
The maximum static drain-source on-resistance is 0.51W at Vgs=10V, ID=6.5A.
The gate threshold voltage ranges from 3.3V to 4.5V.
The AOT13N50 is available in a TO-220 package.
The maximum operating junction temperature is 150°C.
