| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,432 pcs
|
2432 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
185 pcs
|
185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AON6560 is a 30V N-Channel AlphaMOS (αMOS LV) technology MOSFET designed for high performance applications. It offers low on-resistance with a maximum of 0.68mΩ at VGS=10V and 1.1mΩ at VGS=4.5V. This MOSFET boasts high current capability, with a continuous drain current of 200A at 25°C and a power dissipation of 208W at 25°C.
Key electrical characteristics include a gate threshold voltage ranging from 1.4V to 2.2V, and significant charge parameters like Qg(10V) of 230nC and Qg(4.5V) of 130nC. Capacitance values are Ciss at 11500pF, Coss at 3400pF, and Crss at 3100pF.
Switching performance is characterized by typical turn-on delay time of 16ns, turn-off delay time of 115.5ns, rise time of 42ns, and fall time of 91.5ns. The integrated body diode exhibits a reverse recovery time of 38.5ns and a charge of 120nC.
This device operates within a junction temperature range of -55°C to 150°C. Thermal performance is supported by a typical junction-to-ambient thermal resistance of 17°C/W and a junction-to-case thermal resistance of 0.46°C/W.
The AON6560 is supplied in a DFN5x6-8L surface mount package and is available on tape and reel with a minimum order quantity of 3000 units. It is suitable for applications requiring high current handling and efficient switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (BVDSS) for the AON6560 is 30V.
The typical on-resistance (RDS(ON)) of the AON6560 at VGS=10V is 0.68mΩ.
The continuous drain current (ID) for the AON6560 is rated at 200A at 25°C.
The AON6560 MOSFET is supplied in a DFN5x6-8L package.
The junction and storage temperature range for the AON6560 is -55°C to 150°C.
The AON6560 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AON6560 is 1 Unlimited.