AOZ8802ADI
AOS
The AOS AOZ8802ADI is an ultra-low capacitance TVS diode array designed to protect high-speed data lines from ESD events. It offers ±15kV ESD protection and operates at 5V.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,474 pcs
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2474 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The MTB5D0P03J3 from Cystek is a P-Channel Enhancement Mode MOSFET designed for various electronic applications. It features a low on-resistance of 4mΩ typical at VGS=-10V and ID=-20A, and 6mΩ typical at VGS=-4.5V and ID=-10A. The device has a continuous drain current rating of -56A at TC=25°C (package limit) and -18A at TA=25°C.
With a drain-source breakdown voltage (BVDSS) of -30V and a gate-source voltage range of ±20V, this MOSFET is suitable for applications requiring efficient power switching. It also boasts a low gate charge and fast switching characteristics, contributing to improved system performance.
The MTB5D0P03J3 is supplied in a TO-252 package, suitable for surface-mount applications. It is available on tape and reel, with a standard package quantity of 2500 pieces. The component is RoHS3 compliant and halogen-free, indicating adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is -30V.
The typical on-resistance at VGS=-10V and ID=-20A is 4mΩ.
The continuous drain current rating at VGS=-10V and TC=25°C (package limit) is -56A.
The MTB5D0P03J3 is supplied in a TO-252 package.
Yes, the MTB5D0P03J3 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.