| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,700 pcs
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15700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| SVHC Present |
The AOS AOI4N60 is an N-Channel MOSFET with a Drain-Source Voltage (VDS) rating of 600V and a continuous Drain Current (ID) of 4A at 25°C. This device is fabricated using an advanced high voltage MOSFET process, designed to deliver high performance and robustness in popular AC-DC applications.
Key electrical characteristics include a low Static Drain-Source On-Resistance (RDS(ON)) of typically 2.3W at VGS=10V, ID=2A, and a Gate Threshold Voltage (VGS(th)) ranging from 3.4V to 4.5V. The MOSFET also features significant avalanche energy ratings, including a single pulsed avalanche energy of 235mJ.
Packaged in a TO-251A (IPAK) surface mount package, the AOI4N60 is suitable for various industrial power supply designs. Its thermal characteristics include a Junction-to-Case thermal resistance of 1.2°C/W, allowing for efficient heat dissipation.
The part is qualified for industrial applications and has a maximum junction temperature of 150°C. It is noted as 'Not for New Designs', suggesting that alternative components may be more suitable for new projects.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AOI4N60 is 600V.
The continuous drain current (ID) at 25°C for the AOI4N60 is 4A.
The typical Static Drain-Source On-Resistance (RDS(ON)) for the AOI4N60 is 2.3W at VGS=10V and ID=2A.
The AOI4N60 is available in a TO-251A (IPAK) package.
The maximum operating junction temperature (Tj max) for the AOI4N60 is 150°C.
The RoHS status of the AOI4N60 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AOI4N60 is Level 1.
