| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,500 pcs
|
25500 pcs | On Request | 1 | On Request | On Request | 20+21+ | On Request | On Request | |
|
7,937 pcs
|
7937 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AOD2610E is a 60V N-Channel MOSFET designed with AlphaSGT technology, offering low on-resistance and efficient performance. It features a maximum drain-source voltage of 60V and a continuous drain current of 46A at 25°C.
Key electrical characteristics include a low static drain-source on-resistance of less than 9.5mΩ at VGS=10V and 13.3mΩ at VGS=4.5V. The device also has a gate threshold voltage ranging from 1.4V to 2.4V. With a typical total gate charge of 14.5nC at VGS=10V, it is designed for efficient switching.
The MOSFET is housed in a TO-252 package, suitable for surface mounting. It has a maximum power dissipation of 59.5W at 25°C and a junction-to-ambient thermal resistance of 50°C/W, indicating good thermal management capabilities.
Applications for the AOD2610E include high efficiency power supplies and secondary synchronous rectification, leveraging its trench power AlphaSGT technology for optimal performance in demanding power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the AOD2610E is 60V.
The typical static drain-source on-resistance (RDS(ON)) of the AOD2610E at VGS=10V is less than 9.5mΩ.
The AOD2610E has a continuous drain current (ID) rating of 46A at 25°C.
The AOD2610E is supplied in a TO-252 package.
The AOD2610E is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AOD2610E is 1 Unlimited.