| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 0919+ | On Request | On Request |
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The AO4466 from Alpha and Omega Semiconductor is a 30V N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as load switching and Pulse Width Modulation (PWM).
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 30V and a maximum Gate-Source Voltage (VGS) of ±20V. The Static Drain-Source On-Resistance (RDS(ON)) is as low as 23mΩ at VGS=10V and 10A. The device also features a typical Total Gate Charge (Qg) of 7.1nC at VGS=10V.
This MOSFET is housed in an SO8 package. The advanced trench technology employed in its design contributes to its high performance and efficiency in power management tasks. The separated source leads allow for a Kelvin connection, which can help bypass source inductance in certain circuit configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AO4466 is 30V.
The typical Gate Threshold Voltage (VGS(th)) for the AO4466 is 2.1V.
The maximum Static Drain-Source On-Resistance (RDS(ON)) at VGS=10V is 23mΩ.
The AO4466 MOSFET is available in an SO8 package.
The maximum continuous drain current (ID) at 25°C is 10A.
The maximum power dissipation (PD) at 25°C is 3.1W.
The typical total gate charge (Qg) at VGS=10V is 7.1nC.