| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Capacitance | |
| Forward Current | |
| Forward Voltage | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Reverse Recovery Time | |
| Storage Temperature |
The Infineon BGX50A is a high-speed switching diode array with a bridge configuration, suitable for various RF applications. It operates with a maximum reverse voltage of 50V and can handle a forward current of up to 140mA.
Key electrical characteristics include a maximum forward voltage of 1.3V at 100mA and a diode capacitance of 1.5pF at 1MHz. The reverse recovery time is rated at a maximum of 6ns, indicating its suitability for fast switching circuits.
This component is supplied in a SOT143 surface-mount package. It is qualified according to AEC-Q101 and is Pb-free, complying with RoHS standards. The device is designed for operation across a wide temperature range, with a junction temperature up to 150°C and storage temperatures from -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum diode reverse voltage is 50V at 25°C, with a peak reverse voltage of 70V.
The maximum forward current is 140mA at 25°C.
The maximum forward voltage is 1.3V at a forward current of 100mA and 25°C.
The maximum reverse recovery time is 6ns, tested at IF=10mA, IR=10mA, measured at IR=1mA with RL=100Ω.
The BGX50A is available in a surface-mount SOT143 package.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The maximum reverse current is 0.2µA at a reverse voltage of 50V and 25°C.