| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,286 pcs
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2286 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The AO4459 is a 30V P-Channel MOSFET manufactured by Alpha and Omega Semiconductor. It utilizes advanced trench MOSFET technology combined with a low-resistance package to achieve extremely low RDS(ON) values, making it ideal for load switch and battery protection applications.
Key electrical characteristics include a Drain-Source Voltage (VDS) of -30V and a continuous Drain Current (ID) of -6.5A at 25°C. The On-State Resistance (RDS(ON)) is rated at a maximum of 46mΩ at VGS=-10V and 4.5V VGS. The device also features a Gate Threshold Voltage (VGS(th)) typically around -1.9V.
This MOSFET is housed in a compact SOIC-8 surface mount package. Its thermal characteristics include a typical Junction-to-Ambient thermal resistance of 31°C/W at 25°C. The AO4459 is suitable for various applications including automotive, cloud computing, consumer electronics, and industrial motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AO4459 is -30V.
The typical On-State Resistance (RDS(ON)) of the AO4459 at VGS=-10V is 46mΩ.
The continuous drain current (ID) of the AO4459 at 25°C is -6.5A.
The AO4459 MOSFET is available in an SOIC-8 package.
The junction and storage temperature range for the AO4459 is -55°C to 150°C.