| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The AO4459 from AOS is a P-Channel MOSFET with a Drain-Source Voltage (VDS) of -30V and a continuous drain current of -6.5A at 25°C. It utilizes advanced trench MOSFET technology to achieve extremely low On-State Resistance (RDS(ON)), with a maximum of 46mΩ at VGS=-10V and 72mΩ at VGS=-4.5V. This makes it highly suitable for applications requiring efficient power switching.
The device is housed in a SOIC-8 surface mount package, facilitating integration into compact designs. Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) typically around -1.9V, and various capacitance values such as Input Capacitance (Ciss) of 520pF and Output Capacitance (Coss) of 100pF. Dynamic parameters like turn-on and turn-off delay times are also specified, aiding in circuit design and performance optimization.
With a maximum junction temperature of 150°C and thermal resistance ratings like Junction-to-Ambient of 59°C/W, the AO4459 is designed for reliable operation in demanding environments. Its applications include load switching and battery protection circuits where low on-resistance and efficient switching are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
-1.9V
46mΩ
-6.5A
SOIC-8
-55 to 150°C