| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The 3N203 is a Dual Gate Mosfet manufactured by Texas Instruments. This component is housed in a TO-72 package and features a power dissipation rating of 360mW.
Dual Gate Mosfets are specifically designed for use in amplifier circuits operating in the VHF (Very High Frequency) and UHF (Ultra High Frequency) bands. The 3N203's specifications make it suitable for these demanding RF applications.
Additional options may be available for high-reliability applications per MIL-PRF-19500, indicated by an HR suffix. Pb-free lead finish options are also available with a PBF suffix. Contact the manufacturer for specific high-reliability flow details and lead finish availability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The power dissipation of the 3N203 is 360mW.
The 3N203 Dual Gate Mosfet is supplied in a TO-72 package.
Dual Gate Mosfets like the 3N203 are used in VHF and UHF amplifier circuits.
