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120 pcs
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120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Infineon BSS131H6327 is an N-Channel MOSFET designed for general-purpose switching applications. It features a maximum drain-source voltage (Vds) of 240V and a continuous drain current (Id) of 110mA at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 14 Ohms at 100mA and 10V, an input capacitance (Ciss) of 77pF at 25V, and a gate charge (Qg) of 3.1nC at 10V. The device operates within a temperature range of -55°C to 150°C.
Packaged in a compact TO-236-3, SC-59, SOT-23-3 (PG-SOT23) surface-mount package, the BSS131H6327 is suitable for applications where space is limited. Its SIPMOS® technology ensures reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the BSS131H6327 is 240V.
The continuous drain current (Id) at 25°C is 110mA.
The maximum on-resistance (Rds On) is 14 Ohms when measured at 100mA drain current and 10V gate-source voltage.
The operating temperature range for the BSS131H6327 is -55°C to 150°C.
The BSS131H6327 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The RoHS status is ROHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.