| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,500 pcs
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10500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance |
The Toshiba 2SK945 is an N-Channel Enhancement MOSFET designed for various electronic applications. It features a high Drain-Source Breakdown Voltage of 400V and a continuous Drain Current of 1.0A under typical test conditions.
The MOSFET has a minimum Gate Threshold Voltage of 1.5V and a maximum of 3.5V. Its on-resistance is specified at a maximum of 5.0 Ohms. Electrical characteristics include an Input Capacitance of 210pF, a Rise Time of 30ns, and a Fall Time of 80ns.
With a maximum power dissipation of 10W, the 2SK945 has a Thermal Resistance Junction-Ambient of 125°C/W. It is housed in a TO-251VAR package, suitable for surface-mount applications.
This component is suitable for general-purpose switching and amplification tasks where its voltage and current ratings are appropriate. Its N-channel enhancement mode operation makes it a versatile choice for designers.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 400V.
The maximum drain current is 1.0A.
The maximum drain-source on-resistance is 5.0 Ohms.
The maximum power dissipation is 10W.
The 2SK945 is available in a TO-251VAR package.