| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,100 pcs
|
3100 pcs | On Request | 1 | On Request | On Request | 2017+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The AOS AO3406 is a 30V N-Channel MOSFET utilizing advanced trench technology. This design provides excellent on-resistance (RDS(ON)) and low gate charge, making it suitable for various applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 30V and a Gate Threshold Voltage (VGS(th)) typically around 2V. The continuous drain current (ID) is rated at 3.6A at 25°C, with a maximum power dissipation (PD) of 1.4W at 25°C.
This MOSFET is housed in a compact SOT23 package, suitable for surface mounting. Its thermal resistance (RθJA) is 125°C/W at 25°C. The device is designed for applications such as load switching and Pulse Width Modulation (PWM) control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) is 30V.
The typical Gate Threshold Voltage (VGS(th)) is 2V.
The maximum continuous drain current (ID) is 3.6A at 25°C.
The maximum RDS(ON) at VGS=10V is 50mΩ.
The AO3406 is supplied in a SOT23 package.
The operating temperature range is -55 to 150°C.