| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation |
The 2SK727-01 is an N-Channel Silicon Power MOS-FET from Fuji Electric. This component is designed for power applications, offering a maximum breakdown voltage of 900V and a maximum power dissipation of 125W. The maximum operating temperature is rated at 150°C, ensuring reliable performance in demanding environments.
Key electrical characteristics include a minimum drain-source resistance of 2.5Ω. The device has 3 terminals. Its construction as a Silicon Power MOS-FET makes it suitable for various switching and amplification tasks in electronic circuits.
This component is manufactured by Fuji Electric and is part of their line of discrete semiconductor products. Its specifications suggest applications in power supply units, motor control, and other areas requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum breakdown voltage is 900V.
The maximum power dissipation is 125W.
The maximum operating temperature is 150°C.
The minimum drain-source resistance is 2.5Ω.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.