| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BU2525AW is a silicon power transistor manufactured by NXP Semiconductors. This component is designed for power applications, featuring a high collector-emitter voltage rating of 800V and a maximum collector current of 12A. Its maximum power dissipation is rated at 125W, making it suitable for demanding tasks.
The transistor is housed in an SOT package, typically indicating a surface-mount form factor. The maximum operating temperature is 150°C, ensuring reliability in various thermal environments. With 3 terminals, it offers standard connectivity for power circuits.
This power transistor is part of the broader category of discrete semiconductor products, specifically for current regulation applications. Its specifications suggest use in power supply circuits, motor control, or other high-power switching applications where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current of the BU2525AW is 12A.
The collector-emitter voltage rating of the BU2525AW is 800V.
The collector-emitter saturation voltage of the BU2525AW is 5V.
The maximum power dissipation of the BU2525AW is 125W.
The BU2525AW is packaged in a Surface Mount SOT case.
The maximum operating temperature of the BU2525AW is 150°C.