| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| Mounting Type |
The 2SK725 is an N-Channel Silicon Power MOSFET manufactured by FEC. It offers a breakdown voltage of 500V and a maximum power dissipation of 125W, making it suitable for various power switching applications.
This MOSFET has a drain-source on-resistance of 380mΩ at a typical test condition of VGS=10V and ID=1A. The forward voltage is 1V under similar conditions. It operates within a temperature range of -55°C to 150°C.
The 2SK725 is packaged in an SC case and is designed for through-hole mounting. Its specifications suggest utility in power supply circuits, motor control, and other applications requiring robust switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the 2SK725 MOSFET is 500V.
The maximum power dissipation for the 2SK725 is 125W.
The 2SK725 operates in a temperature range of -55°C to 150°C.
The 2SK725 is in an SC package.
The 2SK725 is designed for through-hole mounting.