IRL540NPBF
Infineon
The Infineon IRL540NPBF is an N-Channel MOSFET designed for power switching applications. It features a 55V drain-source voltage and 12A continuous drain current.
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SK534 is an N-Channel MOSFET housed in a TO3P package, suitable for through-hole mounting. This component offers a Drain-Source Breakdown Voltage (Vbr DSS) of 800V and a maximum continuous Drain Current (Id) of 5.0A. Its Maximum Power Dissipation (PD) is rated at 100W, and it operates within a temperature range of -55°C to 150°C.
Key electrical characteristics include an Input Capacitance (Ciss) of 850pF, a Forward Transconductance (gfs) between 0.8S and 1.2S, and a maximum On-Resistance (Rds On) of 4.0 Ohms. The device also has a maximum Pinch-off Voltage (Vp) of 4.0V. Fall time (tf) is specified at 65ns, and rise time (Tr) at 60ns.
This MOSFET is designed for applications requiring high voltage and moderate current switching. Its specifications make it suitable for power supply circuits, motor control, and general-purpose amplification where robust performance is needed. The TO3P package facilitates efficient heat dissipation and reliable connections in demanding environments.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Breakdown Voltage (Vbr DSS) for the 2SK534 is 800V.
The maximum continuous Drain Current (Id) for the 2SK534 is 5.0A.
The maximum power dissipation (Max. PD) for the 2SK534 is 100W.
The 2SK534 comes in a TO3P package.
The 2SK534 has a maximum operating temperature of 150°C.
