| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Renesas 2SK2788VYTR-E is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 2A, making it suitable for power switching and amplification tasks.
This MOSFET is housed in an UPAK package, designed for surface mount technology (SMT), which facilitates automated assembly and space-saving designs on printed circuit boards. The UPAK package typically offers good thermal performance for its size.
Key electrical characteristics include its N-channel enhancement mode operation. While specific details on gate threshold voltage, on-resistance (Rds(on)), and pulsed drain current are best confirmed via the datasheet, the provided specifications indicate a robust component for general-purpose power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 2SK2788VYTR-E is 60V.
The continuous drain current (Id) for the 2SK2788VYTR-E is 2A.
The 2SK2788VYTR-E MOSFET is supplied in an UPAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.