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628 pcs
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628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FUJ 2SK2647 is a general-purpose N-Channel Power MOSFET. It is constructed with silicon and utilizes Metal-Oxide Semiconductor FET technology. This component offers a minimum drain-source breakdown voltage of 800V and a maximum continuous drain current of 4A. The maximum pulsed drain current is rated at 16A. Its on-resistance is specified at a maximum of 4 ohms.
The MOSFET includes a built-in diode and is configured as a single transistor. It has an avalanche energy rating of 109 mJ. The package type is TO-220AB, featuring a through-hole mounting style and a rectangular package shape made of plastic/epoxy.
This component is suitable for various power switching and amplification applications where its voltage and current ratings are appropriate. The through-hole mounting facilitates integration into circuit boards for robust connections.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the FUJ 2SK2647 is 4A.
The minimum drain-source breakdown voltage for the 2SK2647 is 800V.
The maximum drain-source on-resistance for the FUJ 2SK2647 is 4 ohms.
The FUJ 2SK2647 is a general-purpose power, N-Channel, Metal-Oxide Semiconductor FET.
The FUJ 2SK2647 is supplied in a TO-220AB package with through-hole mounting.