| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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92,930 pcs
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92930 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Toshiba TK12A50D5 is a general-purpose power MOSFET featuring an N-channel configuration with a built-in diode. It is designed for switching applications and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 500V and a maximum continuous drain current of 12A, with a pulsed drain current capability of up to 48A. The maximum drain-source on-resistance is 0.73 ohms. The device also has an avalanche energy rating (Eas) of 364 mJ.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) technology. It is housed in a TO-220AB package with a flange mount style and through-hole termination. The package body is constructed from plastic/epoxy.
Compliance information indicates RoHS3 compliance, an MSL of 1 Unlimited, and REACH unaffected status. This component is suitable for various power switching circuits.
The minimum breakdown voltage for the TK12A50D5 is 500V.
The maximum continuous drain current (ID) for the TK12A50D5 is 12A.
The maximum drain-source on-resistance for the TK12A50D5 is 0.73 ohms.
The TK12A50D5 is supplied in a TO-220AB package.
The TK12A50D5 is RoHS3 Compliant.