| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The Hitachi 2SK213 is a Silicon N-Channel MOS Field-Effect Transistor (FET) manufactured by Hitachi Semiconductor. This component is designed for various electronic applications requiring efficient switching and amplification.
Key electrical specifications include a Drain-Source Voltage rating of 250V and a typical Drain-Source Resistance of 260mΩ. The maximum power dissipation is rated at 1.5W, with a higher power dissipation value of 75W noted, likely under specific thermal conditions or with heatsinking. The maximum operating temperature is 150°C.
The 2SK213 comes in a TO-220AB package, which is a standard through-hole mounting type suitable for power applications. It features 3 terminals for connection.
Environmental compliance indicates RoHS3 compliance, with an MSL rating of 1 and REACH unaffected status. This component is suitable for designs requiring reliable N-Channel MOSFET performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the 2SK213 is 250V.
The typical Drain-Source Resistance of the 2SK213 is 260mΩ.
The maximum power dissipation of the 2SK213 is 1.5W.
The maximum operating temperature for the 2SK213 is 150°C.
The 2SK213 is available in a TO-220AB package.
The 2SK213 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SK213 is 1 Unlimited.
