| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,264 pcs
|
2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The IAUC100N04S6N022 from Infineon is an OptiMOS™- 6 series N-Channel enhancement mode power MOSFET. It is specifically designed for automotive applications and is AEC Q101 qualified.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a continuous drain current of up to 100A at 25°C case temperature with a 10V gate-source voltage. The device exhibits low on-state resistance, with a maximum of 2.26 mΩ at VGS=10V and ID=50A.
This MOSFET operates over a wide temperature range from -55°C to +175°C. It features a power dissipation of 75W at 25°C case temperature. The device is supplied in a PG-TDSON-8 package, suitable for surface mounting.
Compliance includes RoHS3 compliance and MSL 1 rating. The 100% avalanche tested feature ensures reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 100A at TC=25°C, VGS=10V.
The typical on-state resistance is 1.77 mΩ at VGS=10V, ID=50A.
The operating temperature range is -55°C to +175°C.
The IAUC100N04S6N022 is supplied in a PG-TDSON-8 package.
Yes, the IAUC100N04S6N022 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.