GSOT03C-GS08
Vishay
The Vishay Semiconductors GSOT03C-GS08 is a two-line ESD-protection device in a SOT-23 package. It offers ±30 kV ESD immunity and a peak pulse current rating of 30A.
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Hitachi 2SK1637 is a Silicon N-Channel MOS FET, categorized under transistors. This component is designed for various electronic applications requiring robust power handling capabilities.
Key electrical specifications include a maximum drain-to-source voltage (Vds) of 600V and a continuous drain current (Id) of 4A. It also offers a significant drain peak current (Id(pulse)) of 16A under specific pulse conditions. The channel dissipation (Pch) is rated at 35W at 25°C.
Thermal characteristics are important for this device, with a maximum channel temperature (Tch) of 150°C and a storage temperature range from -55°C to +150°C. The device is suitable for surface mount applications, facilitating integration into compact electronic designs.
Environmental compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are currently unverified.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the 2SK1637 is 600V.
The continuous drain current (Id) for the 2SK1637 is 4A.
The peak pulse drain current (Id(pulse)) for the 2SK1637 is 16A, with a pulse width less than or equal to 10 µs and a duty cycle less than or equal to 1%.
The channel dissipation (Pch) of the 2SK1637 is 35W at a case temperature of 25°C.
The 2SK1637 has a channel temperature rating of 150°C and a storage temperature range of -55°C to +150°C.