| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150,667 pcs
|
150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The Renesas 2SK160A-T1B/K25/K26 is an N-Channel MOSFET specifically engineered for electronic switching applications. This component is encapsulated in a compact SOT-23 surface-mount package, making it suitable for high-density PCB designs.
Key electrical characteristics include a maximum Drain-Source Voltage (VDSS) of 30V, a maximum Gate-Source Voltage (VGSS) of 15V, and a continuous Drain Current (ID) of up to 150mA. The device has a maximum power dissipation (PD) of 200mW.
This MOSFET offers high switching speed and low on-resistance, contributing to efficient power control and reduced energy waste. Its compatibility with standard SMT technology ensures easy integration into existing designs. The component is suitable for applications in power management, automotive, industrial, and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) is 30V.
The continuous drain current (ID) is up to 150mA.
The maximum power dissipation (PD) is 200mW.
This MOSFET is supplied in a SOT-23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
