2SJ377 The Toshiba 2SJ377 is a P-Channel MOSFET designed for surface mount applications. It features a 60V breakdown voltage and 280mΩ minimum drain-source resistance.
Mfr Part #:

2SJ377

Available from 3 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 2SJ377 is a P-Channel MOSFET designed for surface mount applications. It features a 60V breakdown voltage and 280mΩ minimum drain-source resistance.
✓ Total Stock: 520,796 pcs
$ Price Range: $0.99

2SJ377 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
516,571 pcs
516571 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,225 pcs
2225 pcs On Request 1 On Request On Request / On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request 02+ On Request On Request

2SJ377 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Power Dissipation

2SJ377 Description

Short technical summary and product information.

The Toshiba 2SJ377 is a P-Channel MOSFET suitable for various electronic applications. It is housed in a TO-252 package for surface mounting.

 

Key electrical specifications include a minimum breakdown voltage of 60V and a minimum drain-source resistance of 280mΩ. The device can handle a maximum power dissipation of 20W. It operates within a temperature range of -55°C to 150°C.

 

Additional parameters include a rise time of 25ns and a fall time of 55ns. The MOSFET is manufactured by Toshiba and is part of the single P-Channel MOSFET category.

2SJ377 Quick Information

Product Type: MOSFET
Canonical Name: 2SJ377 P-Channel MOSFET
Subcategory: P-Channel

2SJ377 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SJ377 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SJ377 Features

  • P-Channel MOSFET by Toshiba
  • 60V breakdown voltage
  • 280mΩ minimum drain-source resistance
  • 20W maximum power dissipation
  • TO-252 surface mount package

2SJ377 Applications

  • P-channel MOSFET for high-side load switching.
  • Used in power management and battery protection.
  • Suitable for DC-DC converter power stages.
  • Ideal for power supply switching applications.

2SJ377 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the 2SJ377 MOSFET?

The breakdown voltage is 60V.

What is the minimum drain-source resistance for the 2SJ377?

The minimum drain-source resistance is 280mΩ.

What is the maximum power dissipation of the 2SJ377?

The maximum power dissipation is 20W.

What is the operating temperature range for the 2SJ377?

The operating temperature range is -55°C to 150°C.

What package type is the 2SJ377 MOSFET in?

The 2SJ377 is in a TO-252 package for surface mounting.

Is the 2SJ377 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2SJ377?

The Moisture Sensitivity Level is 1 Unlimited.

2SJ377 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
2SK612
2SK612
NEC
The NEC 2SK612 is a MOS Field Effect Power Transistor. It offers a breakdown voltage of 100V and a maximum power dissipation of 20W.
View Part
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