| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The NEC 2SK612 is a MOS Field Effect Power Transistor designed for various electronic applications. This component features a minimum breakdown voltage of 100V and a maximum power dissipation of 20W, making it suitable for power handling tasks.
With an operating temperature range up to 150°C, the 2SK612 is built to withstand demanding thermal conditions. The transistor has a drain-source resistance of 450mΩ minimum. It is manufactured by NEC, a recognized name in semiconductor technology.
This transistor is part of the broader category of discrete semiconductor products, specifically within the realm of power transistors. Its specifications suggest utility in switching or amplification circuits where moderate power levels are involved.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 2SK612 is 100V.
The maximum power dissipation for the 2SK612 is 20W.
The 2SK612 can operate at a maximum temperature of 150°C.
The minimum drain-source resistance of the 2SK612 is 450mΩ.