2SAR554P5T100
ROM
The LAPIS Semiconductor 2SAR554P5T100 is a PNP bipolar junction transistor designed for medium power applications. It features a breakdown voltage of 80V and a maximum collector current of 1.5A.
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90,400 pcs
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90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SJ238 is a P-Channel MOSFET manufactured by Toshiba, designed for general-purpose switching and amplification applications. This device features a minimum drain-source breakdown voltage of 60V and a minimum drain-source resistance of 1.4Ω, making it suitable for low to medium voltage circuits.
With a maximum power dissipation of 500mW, the 2SJ238 is appropriate for low-power designs where thermal management is a consideration. The device is rated for a maximum operating junction temperature of 150°C, providing a reasonable thermal margin for typical operating conditions.
This MOSFET is categorized under discrete semiconductor products as a single transistor. It is commonly used in power management, load switching, and signal processing circuits where P-Channel characteristics are required.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating junction temperature is 150°C.
The minimum drain-source breakdown voltage is 60V.
The maximum power dissipation is 500mW.