| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,900 pcs
|
5900 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Supplier Device Package |
The 2SAR554P5T100 from LAPIS Semiconductor is a PNP bipolar junction transistor (BJT) suitable for medium power applications. It offers a collector-emitter breakdown voltage of 80V and can handle a maximum continuous collector current of 1.5A.
This transistor operates with a typical DC current gain (hFE) of 120 at 100mA and 3V. The Vce(sat) is specified at a maximum of 400mV at 500mA collector current and 25mA base current. Its transition frequency (fT) is 340MHz, indicating suitability for moderate frequency applications.
The device is packaged in a TO-243AA surface mount package, identified as MPT3 by the supplier. It has a maximum power dissipation of 500mW and an operating temperature range up to 150°C (TJ). The mounting type is surface mount, requiring appropriate soldering techniques for reliable integration into electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 80V.
It is available in a surface-mount TO-243AA package with an MPT3 supplier device package.
The maximum junction temperature is 150°C.
1.5A.
Minimum 120 at 100mA collector current and 3V Vce.
340MHz typical.
500mW maximum.