| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
155 pcs
|
155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Weight |
The Toshiba 2SJ200 is a Silicon P-Channel MOS Type Field Effect Transistor designed for high power amplifier applications. It offers a high breakdown voltage of -180V and a high forward transfer admittance of 4.0 S (typ.).
Key electrical characteristics include a drain current of -10A, drain power dissipation of 120W at 25°C case temperature, and a maximum channel temperature of 150°C. The device also features a gate-source cut-off voltage ranging from -0.8V to -2.8V and a drain-source saturation voltage of -1.5V typical.
Packaged in a 2-16C1B case, this through-hole mounted MOSFET is complementary to the 2SK1529. It is an electrostatic sensitive device and requires careful handling.
This transistor is suitable for general electronics applications, including computer, personal equipment, office equipment, measuring equipment, industrial robotics, and domestic appliances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-180 V
4.0 S
120 W
-1.5 V
2-16C1B