| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Turn Off Time | |
| Turn On Time | |
| Weight |
The Toshiba 2SK1120 is a silicon N Channel MOS Type Field Effect Transistor, part of the π−MOSII.5 series. It is specifically designed for applications such as DC-DC converters and motor drives.
Key electrical characteristics include a high drain-source ON resistance of 1.5 Ω (typ.) and a high forward transfer admittance of 4.0 S (typ.). The device features a low leakage current of 300 µA (max) at 800 V drain-source voltage. The gate threshold voltage ranges from 1.5 V to 3.5 V.
Maximum ratings are established for safe operation, with a drain-source voltage (V DSS) of 1000 V and a continuous drain current (I D) of 8 A. The drain power dissipation (P D) is rated at 150 W at 25°C case temperature. The channel temperature is limited to 150°C.
This MOSFET is housed in a TO-3P package, suitable for through-hole mounting. It has a typical weight of 4.6 g. The transistor is an electrostatic sensitive device and requires careful handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 2SK1120 is 1000 V.
The continuous drain current (Id) for the 2SK1120 is 8 A.
The typical ON resistance (Rds(on)) for the 2SK1120 is 1.5 Ω.
The gate threshold voltage (Vth) for the 2SK1120 ranges from 1.5 V to 3.5 V.
The 2SK1120 is available in a TO-3P package.
The 2SK1120 is designed for DC-DC converter and motor drive applications.