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The 2SD29 from Sony Corporation is an NPN silicon transistor housed in a SOT9 package. This component is suitable for applications requiring specific electrical characteristics, including a maximum collector-emitter voltage of 60V and a maximum collector current of 3A.
Key electrical specifications include a maximum collector power dissipation of 18W and a forward current transfer ratio (hFE) ranging from a minimum of 30 to a maximum of 276. The operating junction temperature can reach up to 150°C, with a maximum operating temperature of 140°C.
This transistor is not surface mounted and comes in the SOT9 case. Its breakdown voltages are 70V for collector-base and 60V for collector-emitter. The maximum emitter-base voltage is 8V. The collector cutoff current is specified at 20µA at a collector-base voltage of 70V.
Designed for general-purpose use, the 2SD29's specifications make it a candidate for amplification and switching circuits where its voltage and current ratings are appropriate. The SOT9 package is a standard component housing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SD29 transistor is 60V.
The maximum collector current for the 2SD29 transistor is 3A.
The maximum operating junction temperature for the 2SD29 transistor is 150°C.
The 2SD29 transistor is supplied in a SOT9 case.