| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The 2SD1415 from Toshiba is an NPN bipolar junction transistor (BJT) designed for general-purpose applications. It comes in a standard TO-220 package, suitable for through-hole mounting.
Key electrical specifications include a maximum Collector Emitter Voltage of 100V and a maximum Collector Current of 7A. The device also has a maximum Collector Emitter Saturation Voltage of 1.5V. Its maximum power dissipation is rated at 25W, with a typical power dissipation of 2W.
The operating temperature range for the 2SD1415 is from -55°C to 150°C. The transistor has 3 terminals and an NPN polarity.
This component is not designed for applications requiring specialized quality and reliability, or for use in hazardous environments, the aerospace industry, or the medical field.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector Emitter Voltage for the 2SD1415 is 100V.
The 2SD1415 transistor has a maximum Collector Current of 7A.
The 2SD1415 is available in a TO-220 package.
The 2SD1415 operates between -55°C and 150°C.