| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Storage Temperature |
The 2SC3907 from Toshiba is a high-performance NPN planar silicon transistor. It is specifically designed for demanding applications such as audio power amplifiers and DC-to-DC converters. This transistor boasts a high current capability of up to 12A and a significant power dissipation rating of 130W, making it suitable for robust power applications.
Key electrical characteristics include a collector-emitter breakdown voltage of 180V and a collector-base breakdown voltage of 200V. The DC current gain (hFE) is a minimum of 160 at 1A and 5V. The collector-emitter saturation voltage is a maximum of 2V under specific test conditions (IC=8A, IB=0.8A).
The transistor is housed in an SC-65 package, suitable for through-hole mounting. Its operating temperature range is from -55°C to 150°C, with a junction temperature limit of 150°C and a storage temperature range of -55°C to 150°C.
This component is complementary to the 2SA1516 transistor. Its robust specifications make it a reliable choice for power electronics designs requiring efficient amplification and voltage conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current for the 2SC3907 is 12A.
The maximum collector-emitter voltage (V CEO) for the 2SC3907 is 180V.
The 2SC3907 has a maximum power dissipation (PC) of 130W.
The 2SC3907 can operate within a temperature range of -55°C to 150°C.
The 2SC3907 is supplied in the SC-65 package.
