| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature |
The FJV3109R is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. This component is designed for switching applications, inverters, interface circuits, and driver circuits.
Key electrical characteristics include a collector-emitter breakdown voltage of 40V and a DC current gain ranging from 100 to 600. The current gain bandwidth product is 250MHz at 10V and 5mA. It also features a built-in bias resistor with a typical value of 4.7KΩ.
The transistor is housed in a compact SOT-23 package, suitable for surface mounting. The absolute maximum collector power dissipation is rated at 200mW at 25°C ambient temperature. The operating junction temperature range is -55°C to 150°C.
This transistor is a complement to the FJV4109R and is suitable for various electronic designs requiring a pre-biased NPN transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FJV3109R is provided in an SOT-23 package.
The Collector-Emitter Breakdown Voltage is 40V.
The DC Current Gain (hFE) ranges from 100 to 600.
The maximum Collector Power Dissipation is 200mW at Ta=25°C.
The maximum Junction Temperature is 150°C.
The Storage Temperature range is -55°C to 150°C.
