HAT2187WP-EL-E
Renesas
The Renesas HAT2187WP-EL-E is an N-Channel Power MOSFET designed for various applications. It features a 200V drain-source breakdown voltage and a continuous drain current of 17A.
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906 pcs
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906 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC3752 from Sanyo Denki is a silicon power transistor categorized under discrete semiconductor products. It is housed in a standard TO-220 package, suitable for through-hole mounting.
Key electrical characteristics include a maximum collector emitter voltage of 800V and a maximum collector current of 3A. The device also has a collector base voltage rating of 1.1kV and an emitter base voltage of 7V. Its collector emitter saturation voltage is typically 2V, and it operates with a gain bandwidth product of 15MHz. The power dissipation capability is rated at 30W.
With a maximum operating temperature of 150°C, the 2SC3752 is designed for demanding environments. Its specifications make it suitable for power switching and amplification circuits where reliability and performance are critical. The TO-220 package facilitates ease of assembly and thermal management in many designs.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage is 800V.
The maximum collector current is 3A.
The 2SC3752 is available in a TO-220 package.
The maximum operating temperature is 150°C.
The power dissipation is 30W.