| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,871 pcs
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6871 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request | |
|
5,087 pcs
|
5087 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SC2259 is a bipolar junction transistor (BJT) manufactured by Mitsubishi Electric. This NPN type transistor is designed for general-purpose applications.
Key electrical characteristics include a collector-emitter breakdown voltage (V(BR)CEO) of 100V and a maximum power dissipation (P(D) Max.) of 400mW. These specifications make it suitable for various switching and amplification tasks.
The transistor is supplied in a SIP (Single In-line Package) for through-hole mounting. Its robust construction and specified electrical parameters allow for reliable performance in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the 2SC2259 is 100V.
The maximum power dissipation (P(D) Max.) for the 2SC2259 is 400mW.
The 2SC2259 is an NPN transistor.
The 2SC2259 is available in a SIP package.