Mfr Part #:

BFP760H6327

Mfr Name: Infineon

The Infineon BFP760H6327 is an NPN RF bipolar junction transistor designed for high-frequency applications. It features a transition frequency of 45GHz and operates within a temperature range of -55°C to +150°C.

✓ Total Stock: 98,105 pcs

$ Price Range: $0.24

BFP760H6327 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	94,000 pcs On Request	94000 pcs	On Request	1	On Request	On Request	1416+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,105 pcs On Request	4105 pcs	On Request	1	On Request	On Request	2018	On Request	On Request

BFP760H6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Operating Temperature	-55℃~+150℃
SVHC Present	Not Present
Type	NPN

View Similar Products (0)

BFP760H6327 Description

Short technical summary and product information.

The Infineon BFP760H6327 is a high-performance NPN RF bipolar junction transistor (BJT) housed in a compact SOT-343 surface-mount package. This component is engineered for demanding radio frequency applications, offering a transition frequency (fT) of 45GHz.

Key electrical characteristics include a collector-emitter voltage (VCEO) of 4V, a maximum collector current (Ic) of 70mA, and a DC current gain (hFE) of 160. The transistor also exhibits a low collector cutoff current of 40nA and an emitter-base voltage (VEBO) of 1.2V. Its power dissipation capability is rated at 240mW.

Designed for operation across a wide temperature range from -55°C to +150°C, the BFP760H6327 is suitable for various environmental conditions. The SOT-343 package facilitates surface mounting, making it ideal for integration into compact electronic designs where space is a constraint.

This RF BJT is a reliable choice for applications requiring high-frequency signal amplification and switching. Its specifications make it well-suited for use in RF circuits, communication systems, and other high-frequency electronic designs.

BFP760H6327 Quick Information

Product Type: NPN RF Bipolar Junction Transistor

Series: BFP760

Canonical Name: Infineon BFP760H6327 NPN RF Bipolar Junction Transistor

Subcategory: RF

BFP760H6327 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BFP760H6327 Estimated Pricing

Qty	Low	High
1+	$0.24	$0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFP760H6327 Features

NPN RF bipolar junction transistor
45GHz transition frequency
SOT-343 surface mount package
Wide operating temperature range
High frequency signal amplification

BFP760H6327 Applications

Ideal for RF amplifier circuits
Suitable for high-frequency oscillators
Used in communication systems
Component for RF signal processing

BFP760H6327 FAQs

4 frequently asked questions generated from this part’s specifications.

What is the operating temperature range for the BFP760H6327?

The operating temperature range is -55℃ to +150℃.

What is the transition frequency (fT) of the BFP760H6327 transistor?

The transition frequency (fT) is 45GHz.

What is the maximum collector-emitter voltage (VCEO) for this transistor?

The maximum collector-emitter voltage (VCEO) is 4V.

What is the package type for the BFP760H6327?

The package type is SOT-343.