| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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402 pcs
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402 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 2SC2053 is a silicon NPN epitaxial planar type transistor. It is specifically designed for RF power amplifiers within the VHF band, making it ideal for mobile radio applications.
Key electrical specifications include a maximum collector current of 300mA and a maximum collector-emitter voltage of 17V. The device has a maximum power dissipation rating of 600mW and can operate at temperatures up to 135°C.
This transistor is suitable for various RF amplification tasks in communication systems. Its construction as an epitaxial planar type contributes to its performance characteristics in high-frequency applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SC2053 is 300mA.
The maximum collector-emitter voltage for the 2SC2053 is 17V.
The maximum power dissipation for the 2SC2053 is 600mW.
The maximum operating temperature for the 2SC2053 is 135°C.