| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The 2SB804 is a PNP Silicon Epitaxial Planar Transistor manufactured by Shikues Semiconductor. This component is designed for applications requiring high collector-emitter voltage and excellent DC current gain linearity. It features a breakdown voltage of -80V (VCEO) and a continuous collector current of -1A (IC).
The transistor is supplied in a SOT-89 package, suitable for surface mounting. The molding compound has a UL flammability classification rating of 94V-0. Terminals are tin-plated with solderability per MIL-STD-202, Method 208. The operating junction temperature range is -55°C to +150°C, with a storage temperature range also from -55°C to +150°C.
Key electrical characteristics include a DC current gain (hFE) ranging from 90 to 400 at IC = -100mA and VCE = -2V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of -0.5V at IC = -500mA and IB = -50mA. The transition frequency (fT) is typically 80MHz at IC = -10mA and VCE = -5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SB804 is available in a surface mount SOT-89 package.
The operating junction temperature range is -55°C to +150°C.
The maximum collector-emitter voltage (VCEO) is -80V.
The maximum continuous collector current (IC) is -1A.
The DC current gain ranges from 90 to 400 at VCE = -2V, IC = -100mA.
The transition frequency (fT) is 80 MHz typical at IC = -10mA, VCE = -5V.
The collector output capacitance (COBO) is 26 pF typical at VCB = -10V, f = 1MHz.