2SK2112-T1
Renesas
The Renesas 2SK2112-T1 is a Power MOSFET designed for automotive applications. It features a 100V Drain-Source Voltage and a 1A Drain Current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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602,667 pcs
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602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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308 pcs
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308 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The Renesas 2SB798-T1 is a small signal bipolar junction transistor (BJT) with a PNP configuration. It is housed in a POMM surface-mount package.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -25V and a continuous collector current (IC) of up to -1A at 25°C and 100°C. The DC current gain (hFE) ranges from 90 to 400. The transition frequency (fT) is typically 0.11 GHz, and the collector-base capacitance (Cob) is typically 36 pF.
This transistor is suitable for various general-purpose amplification and switching applications where a PNP device is required. Its surface-mount package facilitates integration into automated assembly processes.
Specifications: Package Type: POMM Mounting Type: Surface Mount VCEO: -25V IC: -1A hFE: 90-400 fT: 0.11 GHz
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-25V
-1A
90-400
POMM
Yes