| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The Renesas 2SK2112-T1 is a N-channel Power MOSFET suitable for automotive applications. It offers a maximum Drain-Source Voltage (VDSS) of 100V and a maximum Gate-Source Voltage (VGSS) of 20V. The device has a maximum continuous Drain Current (ID) of 1A and a maximum Power Dissipation (Pch) of 2W.
Electrical characteristics include a typical On-Resistance (RDS(ON)) of 500 mohm at 10V/8V, with a maximum of 800 mohm at 10V and 1200 mohm at 4.5V. The typical Input Capacitance (Ciss) is 178 pF.
This component is housed in a POMM package and is designed for surface mounting. It has a Moisture Sensitivity Level (MSL) of 1.
Key specifications include a maximum VDSS of 100V, a maximum ID of 1A, and a typical RDS(ON) of 500 mohm.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDSS) for the 2SK2112-T1 is 100V.
The typical On-Resistance (RDS(ON)) of the 2SK2112-T1 is 500 mohm at 10V / 8V.
The 2SK2112-T1 is supplied in a POMM package.
The 2SK2112-T1 is designed for surface mounting.
The 2SK2112-T1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SK2112-T1 is 1 Unlimited.