| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 2SB556 is a PNP power transistor manufactured by Sumitomo Electric Industries. It is designed for high-power applications and comes in a TO-3 package.
Key electrical characteristics include a collector-to-emitter voltage (VCEO) of 120V, a collector current (IC) of 12A, and a maximum collector power dissipation (PD) of 100W at 25°C. The junction temperature is rated up to 150°C, with a storage temperature range of -65°C to 150°C.
This transistor is a complement to the 2SD425/426 NPN types. It is suitable for power amplifier applications, particularly recommended for the output stage of high-power, high-fidelity audio frequency amplifiers. The TO-3 case style indicates a through-hole mounting type, suitable for robust power applications.
Available options include high-reliability screening and RoHS compliance by adding a suffix to the part number. This ensures suitability for various industrial and commercial applications requiring reliable power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the 2SB556 is 12A.
The maximum collector power dissipation (PD) for the 2SB556 is 100W at 25°C.
The junction temperature (TJ) for the 2SB556 is rated up to 150°C.
The 2SB556 is supplied in a TO-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.