| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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296 pcs
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296 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BC639-16 from NXP Semiconductors is an NPN Epitaxial Silicon Transistor suitable for various switching and amplifier applications. This transistor offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A.
Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 at IC = 150 mA and VCE = 2V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.5V at IC = 500 mA and IB = 50 mA. The transition frequency (fT) is a minimum of 100 MHz at IC = 10 mA and VCE = 5V.
This component is housed in a TO-92 package, designed for through-hole mounting. The operating and storage junction temperature range is from -55°C to 150°C. The thermal resistance from junction to ambient is 150°C/W.
Applications for the BC639-16 include driver stages of audio/video amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC639-16 is 80V.
The continuous collector current (IC) rating for the BC639-16 is 1A.
The BC639-16 transistor is supplied in a TO-92 package.
The operating junction temperature range for the BC639-16 is -55°C to 150°C.
The DC current gain (hFE) of the BC639-16 at IC = 150 mA and VCE = 2V ranges from 100 to 250.
The transition frequency (fT) of the BC639-16 is a minimum of 100 MHz at VCE = 5V and IC = 10mA.