| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature |
The 2SB531 from Toshiba is a silicon PNP power transistor engineered for power amplifier applications. This component offers a robust collector-emitter breakdown voltage of -100V, ensuring reliable operation in demanding circuits.
With a high power dissipation capability of up to 50W at a case temperature of 25°C, the 2SB531 is suitable for applications requiring significant power handling. Its electrical characteristics include a continuous collector current of -6A and a continuous emitter current of 6A.
The transistor's complementary type is the 2SD371. Key electrical parameters include a typical collector-emitter saturation voltage of -2.0V and a typical base-emitter on-voltage of -1.5V under specific conditions. The DC current gain (hFE) ranges from 40 to 240 at -1A and VCE of -5V.
Designed for general power amplification, the 2SB531 is a reliable choice for various electronic designs where stable power output and voltage handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
50W
-6A
-2.0V
8MHz
2SD371