| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Toshiba 2SA1204-O is a silicon PNP epitaxial transistor utilizing the PCT process, designed for audio frequency amplifier applications. It is particularly suitable for the output stage of 1-watt amplifiers.
Key electrical characteristics include a high DC current gain (hFE) ranging from 100 to 320, with a typical value of 100 to 320 at VCE = -1V and IC = -100mA. The collector-emitter breakdown voltage (V(BR)CEO) is -30V. It also features a collector-emitter saturation voltage (VCE(sat)) of -0.7V maximum at IC = -500mA and IB = -20mA, and a transition frequency (fT) of 120MHz typical at VCE = -5V and IC = -10mA.
This transistor is housed in a small flat package (PW-MINI) suitable for surface mounting. The maximum collector power dissipation (PC) is 1W when mounted on a ceramic substrate. It is complementary to the 2SC2884 transistor.
Absolute maximum ratings include a collector-base voltage (VCBO) of -35V, collector-emitter voltage (VCEO) of -30V, emitter-base voltage (VEBO) of -5V, collector current (IC) of -800mA, and base current (IB) of -160mA. The junction temperature (Tj) is rated up to 150°C, and the storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DC current gain (hFE(1)) for the 2SA1204-O transistor is between 100 and 320 when tested at VCE = -1V and IC = -100mA.
The maximum collector current (IC) for the 2SA1204-O transistor is -800 mA.
The collector-emitter breakdown voltage (V(BR)CEO) for the 2SA1204-O transistor is -30 V.
The 2SA1204-O transistor is supplied in a PW-MINI package.