| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
663 pcs
|
663 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Turn On Time |
The Sanyo Denki 2SB1201 is an Epitaxial Planar Silicon Transistor designed for high-current switching applications. It features a PNP/NPN polarity and is housed in a TO-252-3 surface-mount package.
Key electrical specifications include a collector-emitter voltage (Vceo) of -50V and a collector-base voltage (Vcbo) of -60V. The continuous collector current (Ic) is rated at -2A, with a pulsed collector current of -4A. Power dissipation is 1.8W at 25°C case temperature and 0.8W at 25°C ambient temperature. The transistor exhibits a low collector-to-emitter saturation voltage (Vce(sat)) of -0.4V typical at -1A collector current and -50mA base current.
With a gain bandwidth product (fT) of 150MHz typical at -10V and -50mA, the 2SB1201 offers fast switching speeds. Typical turn-on time is 50ns, storage time is 500ns, and fall time is 30ns. The operating junction temperature range is -55°C to 150°C.
This component is suitable for applications such as voltage regulators, relay drivers, and lamp drivers. Its small and slim package facilitates smaller set designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the 2SB1201 is -50V.
The maximum continuous collector current (Ic) for the 2SB1201 is -2A.
The typical collector-emitter saturation voltage (Vce(sat)) for the 2SB1201 is -0.3V at Ic = -1A and Ib = -50mA.
The 2SB1201 comes in a TO-252-3 package.
The operating junction temperature range for the 2SB1201 is -55°C to 150°C.