| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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119 pcs
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119 pcs | On Request | 1 | On Request | On Request | 1717+ | On Request | On Request |
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The 2SB1188-R is a PNP bipolar junction transistor manufactured by SECOS. This single BJT is designed for general-purpose switching and amplification applications in electronic circuits.
Key electrical specifications include a minimum collector-base breakdown voltage of -40V, a minimum collector-emitter breakdown voltage of -32V, and a minimum emitter-base breakdown voltage of -5V. The device supports a continuous collector current of -2A and a peak collector current of -3A.
The part is categorized under discrete semiconductor products as a single bipolar transistor. It is suitable for use in a variety of low to medium power circuits requiring PNP transistor characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-base breakdown voltage is -40V at IC = -50μA, IE = 0.
The maximum continuous collector current is -2A.
The maximum peak collector current is -3A.
The minimum collector-emitter breakdown voltage is -32V at IC = -1mA, IB = 0.
The minimum emitter-base breakdown voltage is -5V at IE = -50μA, IC = 0.
